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Issue ESAIM: Proc.
Volume 15, 2005
GRIP - Research Group on Particle Interactions
Page(s) 75 - 86
DOI http://dx.doi.org/10.1051/proc:2005023

ESAIM: Proc., 2005, Vol. 15, pp. 75-86
DOI: 10.1051/proc:2005023

Numerical schemes for solving the non-stationary Boltzmann-Poisson system for two-dimensional semiconductor devices

Ch. Auer1, A. Majorana2 and F. Schürrer1

1  Institute of Theoretical and Computational Physics, Graz University of Technology, Graz, Austria; &
2  Dipartimento di Matematica e Informatica, Università di Catania, Catania, Italy;

auer@itp.tu-graz.ac.at
schuerrer@itp.tu-graz.ac.at
majorana@dmi.unict.it

Abstract
In this paper we present a new way of discretizing the Boltzmann-Poisson system describing the electron transport in semiconductor devices. The new method is based on a cell average technique for the momentum space combined with a non-uniform discretization in real space. Results of the simulation of a 2D silicon MOSFET are shown and compared with Monte Carlo data. We found that the proposed scheme reduces both the number of grid points and the CPU time, without loss of accuracy.


Résumé
Dans cet article, on présente une nouvelle façon de discrétiser le système de Boltzmann-Poisson décrivant le transport des électrons dans les semi-conducteurs. Cette nouvelle méthode est fondée sur des techniques de moyennes par cellule pour l'espace des moments combinées avec une discrétisation non uniforme sur l'espace réel. Des résultats de simulation d'un MOSFET 2D Silicone sont présentés et comparés avec des données Monte-Carlo. On trouve que le schéma proposé réduit à la fois le nombre de points de grille et le temps CPU, sans perte de précision.


Key words: Boltzmann-Poisson system, semiconductor device simulation, non-uniform grids


© EDP Sciences, ESAIM 2005


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